Invention Grant
US08129228B2 Manufacturing method for integrating a shunt resistor into a semiconductor package
有权
用于将分流电阻器集成到半导体封装中的制造方法
- Patent Title: Manufacturing method for integrating a shunt resistor into a semiconductor package
- Patent Title (中): 用于将分流电阻器集成到半导体封装中的制造方法
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Application No.: US12910933Application Date: 2010-10-25
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Publication No.: US08129228B2Publication Date: 2012-03-06
- Inventor: Ubol Udompanyavit , Sreenivasan K Koduri , Gerald W Steele , Jason M Cole , Steven Kummerl
- Applicant: Ubol Udompanyavit , Sreenivasan K Koduri , Gerald W Steele , Jason M Cole , Steven Kummerl
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Steven A. Shaw; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
An integrated circuit package that comprises a lead frame, an integrated circuit located on the lead frame and a shunt resistor coupled to the lead frame and to the integrated circuit. The shunt resistor has a lower temperature coefficient of resistance than the lead frame, and the lead frame has a lower resistivity than the shunt resistor. The shunt resistor has a low-resistance coupling to external leads of the lead frame, or, the shunt resistor has its own integrated external leads.
Public/Granted literature
- US20110033985A1 Manufacturing Method for Integrating a Shunt Resistor into a Semiconductor Package Public/Granted day:2011-02-10
Information query
IPC分类:
