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US08129239B2 Semiconductor device having an expanded storage node contact and method for fabricating the same 失效
具有扩展存储节点接触的半导体器件及其制造方法

  • Patent Title: Semiconductor device having an expanded storage node contact and method for fabricating the same
  • Patent Title (中): 具有扩展存储节点接触的半导体器件及其制造方法
  • Application No.: US12963092
    Application Date: 2010-12-08
  • Publication No.: US08129239B2
    Publication Date: 2012-03-06
  • Inventor: Tae O Jung
  • Applicant: Tae O Jung
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: Ladas & Parry LLP
  • Priority: KR10-2008-0110123 20081106
  • Main IPC: H01L21/8242
  • IPC: H01L21/8242
Semiconductor device having an expanded storage node contact and method for fabricating the same
Abstract:
A semiconductor device is disclosed that stably ensures an area of a storage node contact connected to a junction region in an active region of the semiconductor device and is thus able to improve the electrical properties of the semiconductor device and enhance a yield, and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having an active region including a gate, a storage node contact region, and an isolation region that defines the active region. A passing gate and an isolation structure surrounding the passing gate are formed in the isolation region. A silicon epitaxial layer is selectively formed over an upper portion of the passing gate to expand the storage node contact region.
Abstract(Chinese):

公开了一种半导体器件，其稳定地确保与半导体器件的有源区域中的接合区域连接的存储节点接触区域，从而能够改善半导体器件的电性能并提高产量， 制作相同。 半导体器件包括具有包括栅极，存储节点接触区域和限定有源区域的隔离区域的有源区域的半导体衬底。 在隔离区域中形成通过栅极和围绕通过栅极的隔离结构。 在通过栅极的上部选择性地形成硅外延层，以使存储节点接触区域膨胀。

Public/Granted literature
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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
H01L21/8242 .........动态随机存取存储结构（DRAM）
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