Invention Grant
- Patent Title: Methods of forming a plurality of capacitors
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Application No.: US12857159Application Date: 2010-08-16
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Publication No.: US08129240B2Publication Date: 2012-03-06
- Inventor: Vishwanath Bhat , Kevin R. Shea
- Applicant: Vishwanath Bhat , Kevin R. Shea
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/8242
- IPC: H01L21/8242
Abstract:
A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.
Public/Granted literature
- US20100311219A1 Methods of Forming a Plurality of Capacitors Public/Granted day:2010-12-09
Information query
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