Invention Grant
- Patent Title: Advanced CMOS using super steep retrograde wells
- Patent Title (中): 先进的CMOS使用超级陡逆流井
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Application No.: US13006224Application Date: 2011-01-13
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Publication No.: US08129246B2Publication Date: 2012-03-06
- Inventor: Jeffrey A. Babcock , Angelo Pinto , Scott Balster , Alfred Haeusler , Gregory E. Howard
- Applicant: Jeffrey A. Babcock , Angelo Pinto , Scott Balster , Alfred Haeusler , Gregory E. Howard
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50).
Public/Granted literature
- US20110111553A1 ADVANCED CMOS USING SUPER STEEP RETROGRADE WELLS Public/Granted day:2011-05-12
Information query
IPC分类:
