Invention Grant
- Patent Title: Integrated transistor, particularly for voltages and method for the production thereof
- Patent Title (中): 集成晶体管，特别用于电压及其制造方法
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Application No.: US12878377Application Date: 2010-09-09
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Publication No.: US08129249B2Publication Date: 2012-03-06
- Inventor: Karlheinz Mueller , Klaus Roeschlau
- Applicant: Karlheinz Mueller , Klaus Roeschlau
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102004002181 20040115
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.
Public/Granted literature
- US20100330765A1 INTEGRATED TRANSISTOR, PARTICULARLY FOR VOLTAGES AND METHOD FOR THE PRODUCTION THEREOF Public/Granted day:2010-12-30
Information query
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