Invention Grant
US08129250B2 Resistor with improved switchable resistance and non-volatile memory device
有权
具有改进的可切换电阻和非易失性存储器件的电阻器
- Patent Title: Resistor with improved switchable resistance and non-volatile memory device
- Patent Title (中): 具有改进的可切换电阻和非易失性存储器件的电阻器
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Application No.: US12538317Application Date: 2009-08-10
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Publication No.: US08129250B2Publication Date: 2012-03-06
- Inventor: Christophe P. Rossel , Michel Despont
- Applicant: Christophe P. Rossel , Michel Despont
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Michael J. Buchenhorner; Vazken Alexanian
- Priority: EP04405439 20040709
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A resistor with improved switchable resistance and a non-volatile memory device includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable conductive region is formed between the first and second electrode. The resistor further includes a perturbation element, locally exerting mechanical stress on the resistance structure in the vicinity of the perturbation element at least during a forming process in which the confined switchable conductive region is formed.
Public/Granted literature
- US20090298253A1 RESISTOR WITH IMPROVED SWITCHABLE RESISTANCE AND NON-VOLATILE MEMORY DEVICE Public/Granted day:2009-12-03
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