Invention Grant
US08129251B2 Metal-insulator-metal-structured capacitor formed with polysilicon
失效
由多晶硅形成的金属 - 绝缘体 - 金属结构电容器
- Patent Title: Metal-insulator-metal-structured capacitor formed with polysilicon
- Patent Title (中): 由多晶硅形成的金属 - 绝缘体 - 金属结构电容器
-
Application No.: US11595985Application Date: 2006-11-13
-
Publication No.: US08129251B2Publication Date: 2012-03-06
- Inventor: Won Sun Seo
- Applicant: Won Sun Seo
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2006-0047084 20060525
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A METAL-INSULATOR-METAL structured capacitor is formed with polysilicon instead of an oxide film as a sacrificial layer material that defines a storage electrode region. A MPS (Meta-stable Poly Silicon) process is performed to increase the surface area of the sacrificial layer that defines the storage electrode region and also increase the area of the storage electrode formed over sacrificial layer. This process results in increasing the capacity of the capacitor in a stable manner.
Public/Granted literature
- US20070284641A1 Metal-insulator-metal-structured capacitor formed with polysilicon Public/Granted day:2007-12-13
Information query
IPC分类:
