Invention Grant
- Patent Title: Firm, insulating and electrically conducting connection of processed semiconductor wafers
- Patent Title (中): 固化，绝缘和导电连接处理的半导体晶圆
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Application No.: US10595303Application Date: 2004-10-29
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Publication No.: US08129255B2Publication Date: 2012-03-06
- Inventor: Roy Knechtel
- Applicant: Roy Knechtel
- Applicant Address: DE Erfurt
- Assignee: X-Fab Semiconductors Foundries AG
- Current Assignee: X-Fab Semiconductors Foundries AG
- Current Assignee Address: DE Erfurt
- Agency: Hunton & Williams LLP
- Priority: DE10350460 20031029
- International Application: PCT/DE2004/002413 WO 20041029
- International Announcement: WO2005/042401 WO 20050512
- Main IPC: H01L21/46
- IPC: H01L21/46
Abstract:
The invention relates to a process for and an arrangement of the connection of processed semiconductor wafers (1, 2) wherein, in addition to the firm connection, there is an electric connection (5) between the semiconductor wafers and/or the electronic structures (3) supporting them. For this purpose, low-melting structured intermediate glass layers (6; 6a) are used as insulating layers and as an electric connection in the form of electrically conductive solder (5) on a glass basis in order to achieve a firm connection.
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