Invention Grant
- Patent Title: Semiconductor device and method for producing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12881616Application Date: 2010-09-14
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Publication No.: US08129273B2Publication Date: 2012-03-06
- Inventor: Tetsuo Yoshizawa , Shin-ichi Urakawa , Takashi Miyake
- Applicant: Tetsuo Yoshizawa , Shin-ichi Urakawa , Takashi Miyake
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-115616 20070425
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
In a semiconductor device which has through holes in an end face, in which a semiconductor element is fixedly mounted on a face of a substrate which has a wiring pattern, which is conductive to the wiring portion formed in the through hole, in at least one face, in which electrodes of the semiconductor element are electrically connected to the wiring pattern, and in which the face of the substrate which has the semiconductor element is coated with a resin, the through hole has a through hole land with a width of 0.02 mm or more, which is conductive to the wiring portion, in a substrate face, and the wiring portion and the through hole land are exposed.
Public/Granted literature
- US20100330725A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2010-12-30
Information query
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