Invention Grant
- Patent Title: Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
- Patent Title (中): 热处理方法和通过光照射加热基板的热处理装置
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Application No.: US12732591Application Date: 2010-03-26
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Publication No.: US08129284B2Publication Date: 2012-03-06
- Inventor: Shinichi Kato
- Applicant: Shinichi Kato
- Applicant Address: JP
- Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee: Dainippon Screen Mfg. Co., Ltd.
- Current Assignee Address: JP
- Agency: Ostrolenk Faber LLP
- Priority: JP2009-109318 20090428; JP2010-018128 20100129
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.
Public/Granted literature
- US20100273333A1 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY LIGHT IRRADIATION Public/Granted day:2010-10-28
Information query
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