Invention Grant
- Patent Title: Method for manufacturing semiconductor device and semiconductor device
- Patent Title (中): 半导体器件和半导体器件的制造方法
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Application No.: US12139774Application Date: 2008-06-16
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Publication No.: US08129287B2Publication Date: 2012-03-06
- Inventor: Tatsuya Suzuki , Hidemitsu Aoki
- Applicant: Tatsuya Suzuki , Hidemitsu Aoki
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2002-303631 20021017
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film is removed while the second oxide film 16 is covered with the resist layer 18 formed thereon, and then the resist layer 18 is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film 22 having different thickness than the second oxide film 16 is formed in the first region 13a.
Public/Granted literature
- US20080248651A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2008-10-09
Information query
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