Invention Grant
- Patent Title: Combinatorial plasma enhanced deposition techniques
- Patent Title (中): 组合等离子体增强沉积技术
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Application No.: US12433842Application Date: 2009-04-30
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Publication No.: US08129288B2Publication Date: 2012-03-06
- Inventor: Sunil Shanker , Tony Chiang
- Applicant: Sunil Shanker , Tony Chiang
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate.
Public/Granted literature
- US20090275210A1 COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES Public/Granted day:2009-11-05
Information query
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