Invention Grant
US08129292B2 Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor
有权
集成电路布置与冲击二极管或晶闸管以及制造和使用晶闸管的方法
- Patent Title: Integrated circuit arrangement with shockley diode or thyristor and method for production and use of a thyristor
- Patent Title (中): 集成电路布置与冲击二极管或晶闸管以及制造和使用晶闸管的方法
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Application No.: US12690776Application Date: 2010-01-20
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Publication No.: US08129292B2Publication Date: 2012-03-06
- Inventor: Ulrich Glaser , Harald Gossner , Kai Esmark
- Applicant: Ulrich Glaser , Harald Gossner , Kai Esmark
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102005056908 20051129
- Main IPC: H01L29/744
- IPC: H01L29/744 ; H01L29/74
Abstract:
An integrated circuit arrangement includes a Shockley diode or a thyristor. An inner region of the diode or of the thyristor is completely or partially shielded during the implantation of a p-type well. This gives rise to a Shockley diode or a thyristor having improved electrical properties, in particular with regard to the use as an ESD protection element.
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Information query
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