Invention Grant
- Patent Title: Nitride semiconductor light-emitting device and method for fabrication thereof
- Patent Title (中): 氮化物半导体发光器件及其制造方法
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Application No.: US12923334Application Date: 2010-09-15
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Publication No.: US08129732B2Publication Date: 2012-03-06
- Inventor: Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
- Applicant: Masahumi Kondou , Takeshi Kamikawa , Yoshinobu Kawaguchi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2004-367005 20041220; JP2005-298361 20051013
- Main IPC: H01L29/18
- IPC: H01L29/18
Abstract:
An adhesion layer of a hexagonal crystal is laid on a facet an optical resonator of a nitride semiconductor laser bar having a nitride-based III-V group compound semiconductor layer, and a facet coat is laid on the adhesion layer. In this way, a structure in which the facet coat is laid on the adhesion layer is obtained.
Public/Granted literature
- US20110007770A1 Nitride semiconductor light-emitting device and method for fabrication thereof Public/Granted day:2011-01-13
Information query
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