Ferroelectric polymer memory modules are described. In an example, a module has a first set of layers including a first ILD layer defining trenches therein, a first electrode layer disposed in the trenches of the first ILD layer, a first conductive polymer layer disposed on the first electrode layer and in the trenches of the first ILD layer, and a ferroelectric polymer layer disposed on the first conductive polymer layer, in and extending beyond the trenches of the first ILD layer. The module also has a second set of layers disposed on the first set of layers to define memory cells therewith. The second set of layers includes a second ILD layer defining trenches therein, a second conductive polymer layer disposed in the trenches of the second ILD layer, and a second electrode layer disposed on the second conductive polymer layer.