Invention Grant
US08129768B2 Integrated circuit device, manufacturing method thereof, and display device
有权
集成电路装置及其制造方法以及显示装置
- Patent Title: Integrated circuit device, manufacturing method thereof, and display device
- Patent Title (中): 集成电路装置及其制造方法以及显示装置
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Application No.: US11802706Application Date: 2007-05-24
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Publication No.: US08129768B2Publication Date: 2012-03-06
- Inventor: Akihide Shibata , Katsumasa Fujii , Yutaka Takafuji , Hiroshi Iwata
- Applicant: Akihide Shibata , Katsumasa Fujii , Yutaka Takafuji , Hiroshi Iwata
- Applicant Address: JP Osaka US CA Palo Alto
- Assignee: Sharp Kabushiki Kaisha,Nanosys, Inc.
- Current Assignee: Sharp Kabushiki Kaisha,Nanosys, Inc.
- Current Assignee Address: JP Osaka US CA Palo Alto
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2006-147283 20060526
- Main IPC: H01L29/772
- IPC: H01L29/772
Abstract:
An integrated circuit device of the present invention includes a substrate on which at least two types of nano wire element are provided. These nano wire elements have functions and materials different from each other. The nano wire elements are constituted by nano wires having sizes differing depending on types of nano wire element. With this, it is possible to dramatically improve a function of the integrated circuit device, as compared with an integrated circuit device including a substrate on which one type of nano wire element is provided.
Public/Granted literature
- US20080042120A1 Integrated circuit device, manufacturing method thereof, and display device Public/Granted day:2008-02-21
Information query
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