Invention Grant
- Patent Title: HOT process STI in SRAM device and method of manufacturing
- Patent Title (中): SRAM设备中的热处理STI和制造方法
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Application No.: US12403380Application Date: 2009-03-13
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Publication No.: US08129790B2Publication Date: 2012-03-06
- Inventor: Gaku Sudo
- Applicant: Gaku Sudo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Banner & Witcoff, Ltd.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A structure and method for forming SRAMs on HOT substrates with STI is described. Logic circuits may also be fabricated on the same chip with some devices on the SOI regions and other devices on the SOI regions.
Public/Granted literature
- US20090230504A1 HOT process STI in SRAM device and method of manufacturing Public/Granted day:2009-09-17
Information query
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