Invention Grant
US08129794B2 Semiconductor device including MISFETs having different threshold voltages
有权
包括具有不同阈值电压的MISFET的半导体器件
- Patent Title: Semiconductor device including MISFETs having different threshold voltages
- Patent Title (中): 包括具有不同阈值电压的MISFET的半导体器件
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Application No.: US12357869Application Date: 2009-01-22
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Publication No.: US08129794B2Publication Date: 2012-03-06
- Inventor: Junji Hirase
- Applicant: Junji Hirase
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-014818 20080125
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device includes a first MIS transistor, and a second MIS transistor having a threshold voltage higher than that of the first MIS transistor. The first MIS transistor includes a first gate insulating film made of a high-k insulating film formed on a first channel region, and a first gate electrode having a first conductive portion provided on and contacting the first gate insulating film and a second conductive portion. The second MIS transistor includes a second gate insulating film made of the high-k insulating film formed on a second channel region, and a second gate electrode having a third conductive portion provided on and contacting the second gate insulating film and a fourth conductive portion. The third conductive portion has a film thickness smaller than that of the first conductive portion, and is made of the same composition material as that of the first conductive portion.
Public/Granted literature
- US20090189225A1 SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD Public/Granted day:2009-07-30
Information query
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