Invention Grant
US08129801B2 Discrete stress isolator attachment structures for MEMS sensor packages
有权
用于MEMS传感器封装的离散应力隔离器附件结构
- Patent Title: Discrete stress isolator attachment structures for MEMS sensor packages
- Patent Title (中): 用于MEMS传感器封装的离散应力隔离器附件结构
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Application No.: US11326916Application Date: 2006-01-06
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Publication No.: US08129801B2Publication Date: 2012-03-06
- Inventor: Mark H. Eskridge
- Applicant: Mark H. Eskridge
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Lowe Graham Jones PLLC
- Main IPC: H01L23/10
- IPC: H01L23/10

Abstract:
A discrete stress isolation apparatus for a Micro Electro-Mechanical System (MEMS) inertial sensor device having a mechanism die and a package. A capacitive device mechanism is formed in a substrate layer positioned between the mechanism die and package substrate. A discrete stress isolation structure is formed in the same substrate layer with but physically separated from the capacitive device mechanism. The discrete stress isolation structure is interposed between the mechanism die and the package substrate and provides the mechanical and electrical attachment therebetween.
Public/Granted literature
- US20070170525A1 Discrete stress isolator Public/Granted day:2007-07-26
Information query
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