Invention Grant
- Patent Title: Microelectromechanical system (MEMS) device and methods for fabricating the same
- Patent Title (中): 微机电系统(MEMS)装置及其制造方法
-
Application No.: US12759845Application Date: 2010-04-14
-
Publication No.: US08129805B2Publication Date: 2012-03-06
- Inventor: Tsyr-Shyang Liou
- Applicant: Tsyr-Shyang Liou
- Applicant Address: TW Taipei
- Assignee: Richwave Technology Corp.
- Current Assignee: Richwave Technology Corp.
- Current Assignee Address: TW Taipei
- Agency: Thomas|Kayden
- Priority: TW99101593A 20100121
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/02

Abstract:
A method of fabricating a microelectromechanical system (MEMS) device includes providing a semiconductor substrate having a semiconductor layer and an interconnect structure. A passivation layer and a photoresist layer are formed over the interconnect structure and a plurality of openings are formed in the photoresist layer to expose portions of the passivation layer. The passivation layer exposed by the openings and the interconnect structure thereunder are removed, forming a plurality of first trenches. The semiconductor layer exposed by the first trenches is removed, forming a plurality of second trenches in the semiconductor layer. An upper capping substrate is provided over the passivation layer, forming a first composite substrate. The semiconductor layer in the first composite substrate is thinned and portions of the thinned semiconductor layer are etched to form a third trench, wherein a suspended micromachined structure is formed in a region between the first, second and third trenches.
Public/Granted literature
- US20110175177A1 MICROELECTROMECHANICAL SYSTEM (MEMS) DEVICE AND METHODS FOR FABRICATING THE SAME Public/Granted day:2011-07-21
Information query
IPC分类: