Invention Grant
- Patent Title: Integrated circuit with a radiation-sensitive thyristor structure
- Patent Title (中): 具有辐射敏感晶闸管结构的集成电路
-
Application No.: US12714678Application Date: 2010-03-01
-
Publication No.: US08130008B2Publication Date: 2012-03-06
- Inventor: Thomas Kuenemund
- Applicant: Thomas Kuenemund
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: G01R31/02
- IPC: G01R31/02

Abstract:
An integrated circuit comprises a circuit used for storing or processing data and a radiation-sensitive thyristor structure configured to conditionally short two power supply terminals of the integrated circuit. The thyristor structure is configured to turn on in response to a region of the thyristor structure being irradiated with radiation to which the thyristor structure is sensitive, in order to establish an electrically conductive connection between a first power supply terminal of the power supply terminals of the integrated circuit and a second power supply terminal of the power supply terminals of the integrated circuit. The thyristor structure is further configured so that a power density of the radiation needed for turning on the thyristor structure is lower than a power density of the radiation needed for a change of data of the circuit used for storing or processing data.
Public/Granted literature
- US20110210782A1 Integrated Circuit with a Radiation-Sensitive Thyristor Structure Public/Granted day:2011-09-01
Information query