Invention Grant
- Patent Title: Power IC and driving method thereof
- Patent Title (中): 电力IC及其驱动方法
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Application No.: US12627952Application Date: 2009-11-30
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Publication No.: US08130011B2Publication Date: 2012-03-06
- Inventor: Sung-Min Park , Seok-Hoon Bang
- Applicant: Sung-Min Park , Seok-Hoon Bang
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2008-0121891 20081203
- Main IPC: H03K5/22
- IPC: H03K5/22 ; H03K5/153

Abstract:
A power integration circuit includes: a first transistor having a control electrode connected to a first voltage source to be supplied with a control signal therefrom, the first transistor being connected between a switch and a ground. A sense resistor has one end connected to the ground. A second transistor has a control electrode connected to the first voltage source to be applied with a control signal therefrom, with the second transistor being connected between the switch and the other end of the sense resistor. The power integration circuit further includes: a comparator for comparing the sense voltage with the reference voltage and delivering a difference between the sense voltage and the reference voltage to a logic circuit.
Public/Granted literature
- US20100134150A1 POWER IC AND DRIVING METHOD THEREOF Public/Granted day:2010-06-03
Information query
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