Invention Grant
- Patent Title: High-frequency device and high-frequency circuit used therein
- Patent Title (中): 其中使用的高频设备和高频电路
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Application No.: US12376678Application Date: 2007-08-09
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Publication No.: US08130055B2Publication Date: 2012-03-06
- Inventor: Kenji Hayashi , Masayuki Uchida
- Applicant: Kenji Hayashi , Masayuki Uchida
- Applicant Address: JP Tokyo
- Assignee: Hitachi Metals, Ltd.
- Current Assignee: Hitachi Metals, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-216448 20060809; JP2006-312771 20061120; JP2007-034435 20070215; JP2007-091192 20070330
- International Application: PCT/JP2007/065661 WO 20070809
- International Announcement: WO2008/018565 WO 20080214
- Main IPC: H03H7/38
- IPC: H03H7/38
Abstract:
A high-frequency device having a high-frequency circuit comprising a high-frequency amplifier, and an output-matching circuit receiving high-frequency power output from the high-frequency amplifier, in and on a multilayer substrate obtained by laminating pluralities of dielectric layers, the output-matching circuit comprising a first transmission line transmitting the high-frequency power from the high-frequency amplifier side to the output terminal side, and at least part of the first transmission line being formed by series-connecting pluralities of conductor patterns formed on pluralities of dielectric layers in a laminate direction.
Public/Granted literature
- US20100182097A1 HIGH-FREQUENCY DEVICE AND HIGH-FREQUENCY CIRCUIT USED THEREIN Public/Granted day:2010-07-22
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