Invention Grant
- Patent Title: On chip slow-wave structure, method of manufacture and design structure
- Patent Title (中): 片上慢波结构,制造方法和设计结构
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Application No.: US12423835Application Date: 2009-04-15
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Publication No.: US08130059B2Publication Date: 2012-03-06
- Inventor: Guoan Wang , Wayne H. Woods, Jr.
- Applicant: Guoan Wang , Wayne H. Woods, Jr.
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Anthony Canale
- Main IPC: H01P1/18
- IPC: H01P1/18

Abstract:
An on-chip slow-wave structure that uses multiple parallel signal paths with grounded capacitance structures, method of manufacturing and design structure thereof is provided. The slow wave structure includes a plurality of conductor signal paths arranged in a substantial parallel arrangement. The structure further includes a first grounded capacitance line or lines positioned below the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A second grounded capacitance line or lines is positioned above the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A grounded plane grounds the first and second grounded capacitance line or lines.
Public/Granted literature
- US20100265007A1 ON CHIP SLOW-WAVE STRUCTURE, METHOD OF MANUFACTURE AND DESIGN STRUCTURE Public/Granted day:2010-10-21
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