Invention Grant
US08130059B2 On chip slow-wave structure, method of manufacture and design structure 有权
片上慢波结构,制造方法和设计结构

On chip slow-wave structure, method of manufacture and design structure
Abstract:
An on-chip slow-wave structure that uses multiple parallel signal paths with grounded capacitance structures, method of manufacturing and design structure thereof is provided. The slow wave structure includes a plurality of conductor signal paths arranged in a substantial parallel arrangement. The structure further includes a first grounded capacitance line or lines positioned below the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A second grounded capacitance line or lines is positioned above the plurality of conductor signal paths and arranged substantially orthogonal to the plurality of conductor signal paths. A grounded plane grounds the first and second grounded capacitance line or lines.
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