Invention Grant
- Patent Title: Flexible word-line pulsing for STT-MRAM
- Patent Title (中): 灵活的字线脉冲STT-MRAM
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Application No.: US12551874Application Date: 2009-09-01
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Publication No.: US08130535B2Publication Date: 2012-03-06
- Inventor: Hari M. Rao , Sei Seung Yoon , Medhi Sani , Seung Duk Lee , Sung Cho
- Applicant: Hari M. Rao , Sei Seung Yoon , Medhi Sani , Seung Duk Lee , Sung Cho
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalasky; Nicholas J. Pauley; Jonathan T. Velasco
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A method for generating a variable pulse width signal on an integrated circuit (IC) chip, includes receiving a first clock signal on the IC chip and receiving a second clock signal on the IC chip having a variable delay relative to the first clock signal. A signal having a rising edge triggered by a rising edge of the first clock signal and a falling edge triggered by a rising edge of the second clock signal is output. The output signal is provided to circuitry on the chip, such as a magnetoresistive junction (MTJ) cell of a spin torque transfer magnetic random access memory (STT-MRAM).
Public/Granted literature
- US20110051502A1 Flexible Word-Line Pulsing For STT-MRAM Public/Granted day:2011-03-03
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