Invention Grant
- Patent Title: Read window in chalcogenide semiconductor memories
- Patent Title (中): 在硫族化物半导体存储器中阅读窗口
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Application No.: US11595055Application Date: 2006-11-09
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Publication No.: US08130536B2Publication Date: 2012-03-06
- Inventor: Ilya V. Karpov , Sergey Kostylev , George A. Gordon , Ward D. Parkinson
- Applicant: Ilya V. Karpov , Sergey Kostylev , George A. Gordon , Ward D. Parkinson
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
Using a shorter read pulse width may increase read window in some embodiments. This may allow the use of higher voltages with less likelihood of a read disturb where a bit unintentionally changes phase.
Public/Granted literature
- US20080112217A1 Read window in chalcogenide semiconductor memories Public/Granted day:2008-05-15
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