Invention Grant
US08130537B2 Phase change memory cell with MOSFET driven bipolar access device
失效
具有MOSFET驱动双极性存取器件的相变存储单元
- Patent Title: Phase change memory cell with MOSFET driven bipolar access device
- Patent Title (中): 具有MOSFET驱动双极性存取器件的相变存储单元
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Application No.: US12207229Application Date: 2008-09-09
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Publication No.: US08130537B2Publication Date: 2012-03-06
- Inventor: Rolf Weis
- Applicant: Rolf Weis
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agent John S. Economou
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L21/00 ; H01L47/00
Abstract:
Embodiments are directed to memory devices comprising a bipolar junction transistor having an emitter, a base and a collector; a first side of a resistance changing memory element coupled to the emitter of the bipolar junction transistor; and a MOSFET coupled to the base of the bipolar junction transistor.
Public/Granted literature
- US20100061145A1 Phase Change Memory Cell with MOSFET Driven Bipolar Access Device Public/Granted day:2010-03-11
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