Invention Grant
US08130538B2 Non-volatile memory circuit including voltage divider with phase change memory devices
有权
包括具有相变存储器件的分压器的非易失性存储器电路
- Patent Title: Non-volatile memory circuit including voltage divider with phase change memory devices
- Patent Title (中): 包括具有相变存储器件的分压器的非易失性存储器电路
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Application No.: US12354121Application Date: 2009-01-15
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Publication No.: US08130538B2Publication Date: 2012-03-06
- Inventor: Peter J. McElheny , Richard G. Smolen , John C. Costello
- Applicant: Peter J. McElheny , Richard G. Smolen , John C. Costello
- Applicant Address: US CA San Jose
- Assignee: Altera Corporation
- Current Assignee: Altera Corporation
- Current Assignee Address: US CA San Jose
- Agency: Mauriel Kapouytian & Treffert LLP
- Agent Ararat Kapouytian
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory circuit including a voltage divider with a first phase change memory (PCM) device and a second PCM device coupled to the first PCM device is described. In one embodiment, the first PCM device is in a set resistance state and the second PCM device is in a reset resistance state. Also, in one embodiment, the voltage divider further includes a first switch coupled to the first PCM device and a second switch coupled to the first switch and the second PCM device. In one embodiment, the memory circuit further includes a half latch coupled to the voltage divider and a cascade transistor coupled to the half latch and the voltage divider.
Public/Granted literature
- US20100177560A1 NON-VOLATILE MEMORY CIRCUIT INCLUDING VOLTAGE DIVIDER WITH PHASE CHANGE MEMORY DEVICES Public/Granted day:2010-07-15
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