Invention Grant
- Patent Title: Phase change random access memory apparatus and write control method for the same
- Patent Title (中): 相变随机存取存储装置和写控制方法相同
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Application No.: US12649086Application Date: 2009-12-29
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Publication No.: US08130540B2Publication Date: 2012-03-06
- Inventor: Dong Keun Kim
- Applicant: Dong Keun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0092497 20090929
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The disclosed phase change random access memory apparatus is configured to program a predetermined phase change memory cell in the phase change memory apparatus in response to a plurality of write instructions applied at independent points of time.
Public/Granted literature
- US20110075474A1 PHASE CHANGE RANDOM ACCESS MEMORY APPARATUS AND WRITE CONTROL METHOD FOR THE SAME Public/Granted day:2011-03-31
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