Invention Grant
- Patent Title: Phase change memory apparatus and test circuit therefor
- Patent Title (中): 相变存储装置及其测试电路
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Application No.: US12650518Application Date: 2009-12-30
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Publication No.: US08130541B2Publication Date: 2012-03-06
- Inventor: Dong Keun Kim , Tae Hun Yoon
- Applicant: Dong Keun Kim , Tae Hun Yoon
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0046806 20090528
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A test circuit transfers data, which is generated by current supplied from an external source, to a memory cell in response to a test mode signal.
Public/Granted literature
- US20100302841A1 PHASE CHANGE MEMORY APPARATUS AND TEST CIRCUIT THEREFOR Public/Granted day:2010-12-02
Information query
