Invention Grant
- Patent Title: Method of reducing bit error rate for a flash memory
- Patent Title (中): 降低闪速存储器误码率的方法
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Application No.: US12542609Application Date: 2009-08-17
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Publication No.: US08130544B2Publication Date: 2012-03-06
- Inventor: Ming-Hung Chou , Chien-Fu Huang , Han-Lung Huang , Shih-Keng Cho
- Applicant: Ming-Hung Chou , Chien-Fu Huang , Han-Lung Huang , Shih-Keng Cho
- Applicant Address: TW Hsinchu
- Assignee: Skymedi Corporation
- Current Assignee: Skymedi Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Squire Sanders (US) LLP
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method of reducing coupling effect in a flash memory is disclosed. A neighboring page is read, and a flag is set active if the neighboring page is an interfering page. Data are read from the neighboring page at least two more times using at least two distinct read voltages respectively. The threshold-voltage distributions associated with an original page and the neighboring page are transferred according to the read data and the flag.
Public/Granted literature
- US20110038205A1 Method Of Reducing Bit Error Rate For A Flash Memory Public/Granted day:2011-02-17
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