Invention Grant
- Patent Title: Method of maintaining the state of semiconductor memory having electrically floating body transistor
- Patent Title (中): 维持具有电浮体晶体管的半导体存储器的状态的方法
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Application No.: US12797334Application Date: 2010-06-09
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Publication No.: US08130547B2Publication Date: 2012-03-06
- Inventor: Yuniarto Widjaja , Zvi Or-Bach
- Applicant: Yuniarto Widjaja , Zvi Or-Bach
- Applicant Address: US CA San Jose
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA San Jose
- Agent Alan W. Cannon
- Main IPC: G11C14/00
- IPC: G11C14/00
Abstract:
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
Public/Granted literature
- US20100246277A1 METHOD OF MAINTAINING THE STATE OF SEMICONDUCTOR MEMORY HAVING ELECTRICALLY FLOATING BODY TRANSISTOR Public/Granted day:2010-09-30
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