Invention Grant
US08130557B2 Memory system and method of writing into nonvolatile semiconductor memory
有权
存储系统和写入非易失性半导体存储器的方法
- Patent Title: Memory system and method of writing into nonvolatile semiconductor memory
- Patent Title (中): 存储系统和写入非易失性半导体存储器的方法
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Application No.: US12967769Application Date: 2010-12-14
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Publication No.: US08130557B2Publication Date: 2012-03-06
- Inventor: Takaya Suda
- Applicant: Takaya Suda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-283388 20050929
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory system includes a nonvolatile semiconductor memory which includes a first original block composed of n (n being natural number) write unit areas and a first subblock composed of a plurality of write unit areas. A controller writes data having one of first to p-th (p being natural number smaller than n) addresses into the first original block. The controller writes data which has a first write address of one of the first to p-th addresses into the first subblock when the controller receives request to write data having the first write address and data having the first write address exists in the first original block.
Public/Granted literature
- US20110087831A1 MEMORY SYSTEM AND METHOD OF WRITING INTO NONVOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2011-04-14
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