Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US12820476Application Date: 2010-06-22
-
Publication No.: US08130565B2Publication Date: 2012-03-06
- Inventor: Tatsuya Sakamoto , Kanji Oishi , Gen Koshita
- Applicant: Tatsuya Sakamoto , Kanji Oishi , Gen Koshita
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Morrison & Foerster LLP
- Priority: JP2009-152058 20090626
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C17/18 ; G11C5/14

Abstract:
A semiconductor device includes internal voltage generating circuits, a switching circuit, load circuits, a control circuit. Each of the plurality of load circuits is supplied with voltage through the switching circuit from any one of the plurality of internal voltage generating circuits. The control circuit defines connecting combinations by the switch circuit. The control circuit supplies a control signal to the switch circuit, based on the control signal corresponding to the definitions of the connecting combinations. The control circuit allows switching the connecting combinations when the semiconductor device tests in a test mode. The control circuit prohibits switching the connecting combinations in a non-test mode. The switch circuit connects between each of m of the internal voltage generating circuits and each of n of the load circuits through a connecting combination which is selected, based on the control signal, from mn of the connecting combinations.
Public/Granted literature
- US20100327954A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-12-30
Information query