Invention Grant
- Patent Title: Semiconductor memory device inputting and outputting a plurality of data length formats and method thereof
- Patent Title (中): 半导体存储器件输入和输出多种数据长度格式及其方法
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Application No.: US11806585Application Date: 2007-06-01
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Publication No.: US08131897B2Publication Date: 2012-03-06
- Inventor: Soo-Young Kim , Mi-Jo Kim , Jung-Soo Ryoo
- Applicant: Soo-Young Kim , Mi-Jo Kim , Jung-Soo Ryoo
- Applicant Address: KR Gyeonngi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonngi-Do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2006-0118964 20061129
- Main IPC: G06F13/12
- IPC: G06F13/12 ; G06F13/00

Abstract:
A semiconductor memory device and method thereof are provided. The example semiconductor memory device may include a first processor configured to exchange data with a first data length format, a second processor configured to exchange data with a second data length format and a shared memory configured to store data, the shared memory being shared by the first and second processors, the shared memory further configured to receive a read command from at least one of the first and second processors and to output data in response to the read command based on which of the first and second data length formats is used by the processor issuing the read command.
Public/Granted literature
- US20080126604A1 Semiconductor memory device and method thereof Public/Granted day:2008-05-29
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