Invention Grant
- Patent Title: Repair bits for a low voltage cache
- Patent Title (中): 修复低电压缓存的位
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Application No.: US12623169Application Date: 2009-11-20
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Publication No.: US08132061B2Publication Date: 2012-03-06
- Inventor: Morgan J. Dempsey , Jose A. Maiz
- Applicant: Morgan J. Dempsey , Jose A. Maiz
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent David P. McAbee
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
A method and apparatus for repairing cache memories/arrays is described herein. A cache includes a plurality of lines and logically viewable in columns. A repair cache coupled to the cache includes a repair bit mapped to each logically viewable column. A repair module determines a bad bit to be repaired within a column based on any individual or combination of factors, such as the number of errors per line of the cache, the number of errors correctable per line of the cache due to error correction code (ECC), the failure rate of bits, or other considerations. The bad bit is transparently repaired by the repair bit mapped to the column including the bad bit, upon an access to a cache line including the bad bit.
Public/Granted literature
- US20100070809A1 REPAIR BITS FOR A LOW VOLTAGE CACHE Public/Granted day:2010-03-18
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