Invention Grant
US08133319B2 Production process of periodic table group 13 metal nitride crystal and production method of semiconductor device using the same
有权
周期表第13族金属氮化物晶体的生产工艺及使用其的半导体器件的制造方法
- Patent Title: Production process of periodic table group 13 metal nitride crystal and production method of semiconductor device using the same
- Patent Title (中): 周期表第13族金属氮化物晶体的生产工艺及使用其的半导体器件的制造方法
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Application No.: US11631394Application Date: 2005-07-04
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Publication No.: US08133319B2Publication Date: 2012-03-13
- Inventor: Yoji Arita , Yoshinori Seki , Takeshi Tahara , Yuzuru Sato
- Applicant: Yoji Arita , Yoshinori Seki , Takeshi Tahara , Yuzuru Sato
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-196206 20040702
- International Application: PCT/JP2005/012704 WO 20050704
- International Announcement: WO2006/004206 WO 20060112
- Main IPC: C30B9/04
- IPC: C30B9/04
Abstract:
A Periodic Table Group 13 metal nitride crystal is grown by causing a reaction of a Periodic Table Group 13 metal phase with a nitride-containing molten salt phase to proceed while removing a by-product containing a metal element except for Periodic Table Group 13 metals, from the reaction field. According to this process, a high-quality Periodic Table Group 13 metal nitride bulk crystal can be produced under low pressure or atmospheric pressure.
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