Invention Grant
US08133549B2 Method for modifying insulating or semi-conductive surfaces, and resulting products
有权
用于改变绝缘或半导体表面的方法以及所得产品
- Patent Title: Method for modifying insulating or semi-conductive surfaces, and resulting products
- Patent Title (中): 用于改变绝缘或半导体表面的方法以及所得产品
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Application No.: US12091894Application Date: 2006-10-09
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Publication No.: US08133549B2Publication Date: 2012-03-13
- Inventor: Christophe Bureau , Jean Pinson
- Applicant: Christophe Bureau , Jean Pinson
- Applicant Address: FR Massy
- Assignee: Alchimer
- Current Assignee: Alchimer
- Current Assignee Address: FR Massy
- Agency: Young & Thompson
- Priority: FR0510914 20051026
- International Application: PCT/FR2006/002260 WO 20061009
- International Announcement: WO2007/048894 WO 20070503
- Main IPC: C08F2/00
- IPC: C08F2/00 ; C08J7/00 ; H01L21/31
Abstract:
The present invention relates to the use of a R—N2+ diazonium salt carrying an aromatic group R, for grafting of the aromatic group onto insulating, semiconductor, binary or ternary compound or composite material surfaces, the diazonium salt being present at a concentration close to its solubility limit, notably at a concentration higher than 0.05 M, and preferably varying between approximately 0.5 M to approximately 4 M.
Public/Granted literature
- US20090301862A1 METHOD FOR MODIFYING INSULATING OR SEMI-CONDUCTIVE SURFACES, AND RESULTING PRODUCTS Public/Granted day:2009-12-10
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