Invention Grant
US08133555B2 Method for forming metal film by ALD using beta-diketone metal complex
有权
使用β-二酮金属络合物通过ALD形成金属膜的方法
- Patent Title: Method for forming metal film by ALD using beta-diketone metal complex
- Patent Title (中): 使用β-二酮金属络合物通过ALD形成金属膜的方法
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Application No.: US12251343Application Date: 2008-10-14
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Publication No.: US08133555B2Publication Date: 2012-03-13
- Inventor: Hiroshi Shinriki , Kunitoshi Namba , Daekyun Jeong
- Applicant: Hiroshi Shinriki , Kunitoshi Namba , Daekyun Jeong
- Applicant Address: JP
- Assignee: ASM Japan K.K.
- Current Assignee: ASM Japan K.K.
- Current Assignee Address: JP
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H05H1/24
- IPC: H05H1/24 ; C23C16/18
Abstract:
A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.
Public/Granted literature
- US20100092696A1 METHOD FOR FORMING METAL FILM BY ALD USING BETA-DIKETONE METAL COMPLEX Public/Granted day:2010-04-15
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