Invention Grant
US08133653B2 Positive resist composition for forming thick-film resist, thick-film resist laminate, and method of forming resist pattern
有权
用于形成厚膜抗蚀剂的正性抗蚀剂组合物,厚膜抗蚀剂层压体以及形成抗蚀剂图案的方法
- Patent Title: Positive resist composition for forming thick-film resist, thick-film resist laminate, and method of forming resist pattern
- Patent Title (中): 用于形成厚膜抗蚀剂的正性抗蚀剂组合物,厚膜抗蚀剂层压体以及形成抗蚀剂图案的方法
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Application No.: US12162775Application Date: 2007-01-31
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Publication No.: US08133653B2Publication Date: 2012-03-13
- Inventor: Hiroshi Shimbori , Masahiro Masujima , Toshihiro Yamaguchi , Sachiko Yoshizawa
- Applicant: Hiroshi Shimbori , Masahiro Masujima , Toshihiro Yamaguchi , Sachiko Yoshizawa
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2006-025770 20060202
- International Application: PCT/JP2007/051589 WO 20070131
- International Announcement: WO2007/088884 WO 20070809
- Main IPC: G03F7/028
- IPC: G03F7/028 ; G03F7/039 ; G03F7/26

Abstract:
A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 μm, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R4″SO3− (wherein, R4″ represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.
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