Invention Grant
- Patent Title: Method of fabricating memory
- Patent Title (中): 制造记忆的方法
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Application No.: US13028187Application Date: 2011-02-15
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Publication No.: US08133777B1Publication Date: 2012-03-13
- Inventor: Lu-Ping Chiang , Hsiu-Han Liao
- Applicant: Lu-Ping Chiang , Hsiu-Han Liao
- Applicant Address: TW Taichung
- Assignee: Winbond Electronics Corp.
- Current Assignee: Winbond Electronics Corp.
- Current Assignee Address: TW Taichung
- Agency: Jianq Chyun IP Office
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L21/8234 ; H01L21/8238 ; H01L21/4763
Abstract:
A method of fabricating a memory is provided. A substrate including a memory region and a periphery region is provided. A plurality of gates each having spacers is formed on the substrate. A plurality of openings is formed between the gates in the memory region. A first material layer is formed in the memory region to cover the gates and fill the openings. A barrier layer is formed on the substrate to cover the gates in the periphery region and the first material layer in the memory region. A second material layer is formed on the substrate in the periphery region to cover the barrier layer in the periphery region. The barrier layer covering the first material layer is removed. The first material layer is partially removed to form a plurality of second openings. Each second opening is disposed on a top of the gate in the memory region.
Information query
IPC分类:
