A semiconductor device and a method of manufacturing a semiconductor device. A method may include forming a first well by injecting first conduction type impurity ions on and/or over a semiconductor substrate, forming an extended drain region overlapped with a region of said first well by injecting second conduction type impurities on and/or over a semiconductor substrate, and/or forming a first conduction type second well on and/or over a semiconductor substrate under an extended drain region to overlap with another region of a first well by injecting second conduction type impurities on and/or over a semiconductor substrate. A method may include forming a gate over a first well overlapped with an extended drain region, and/or forming a drain region by injecting second conduction type impurities on and/or over an extended drain region at one side of a gate.