Invention Grant
- Patent Title: Silicon-germanium hydrides and methods for making and using same
- Patent Title (中): 硅锗氢化物及其制造和使用方法
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Application No.: US12093256Application Date: 2006-11-21
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Publication No.: US08133802B2Publication Date: 2012-03-13
- Inventor: John Kouvetakis , Cole J. Ritter, III
- Applicant: John Kouvetakis , Cole J. Ritter, III
- Applicant Address: US AZ Scottsdale
- Assignee: Arizona Board of Regents
- Current Assignee: Arizona Board of Regents
- Current Assignee Address: US AZ Scottsdale
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- International Application: PCT/US2006/045156 WO 20061121
- International Announcement: WO2007/062096 WO 20070531
- Main IPC: H01L21/205
- IPC: H01L21/205 ; C01B25/00 ; C01B33/00
Abstract:
The present invention provides silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the compounds. The compounds are defined by formula: SiHnI (GeHn2)y, wherein y is 2, 3, or 4 wherein n1 is 0 1, 2 or 3 to satisfy valency and wherein n2 is independently 0, 1, 2 or 3 for each Ge atom in the compound, to satisfy valency.
Public/Granted literature
- US20090050935A1 Silicon-Germanium Hydrides and Methods for Making and Using Same Public/Granted day:2009-02-26
Information query
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