Invention Grant
US08133805B2 Methods for forming dense dielectric layer over porous dielectrics
有权
在多孔电介质上形成致密介电层的方法
- Patent Title: Methods for forming dense dielectric layer over porous dielectrics
- Patent Title (中): 在多孔电介质上形成致密介电层的方法
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Application No.: US12569077Application Date: 2009-09-29
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Publication No.: US08133805B2Publication Date: 2012-03-13
- Inventor: Christos D. Dimitrakopoulos , Mark S. Chace
- Applicant: Christos D. Dimitrakopoulos , Mark S. Chace
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Hoffman Warnick LLC
- Agent Katherine S. Brown
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
Methods for forming a dense dielectric layer over the surface of an opening in a porous inter-layer dielectric having an ultra-low dielectric constant are disclosed. The disclosure provides methods for exposing the sidewall surface and the bottom surface of the opening to a plurality of substantially parallel ultra-violet (UV) radiation rays to form a dense dielectric layer having a substantially uniform thickness over both the sidewall surface and the bottom surface.
Public/Granted literature
- US20100012858A1 METHODS FOR FORMING DENSE DIELECTRIC LAYER OVER POROUS DIELECTRICS Public/Granted day:2010-01-21
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