Invention Grant
- Patent Title: Current detection circuit
- Patent Title (中): 电流检测电路
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Application No.: US12088172Application Date: 2006-09-14
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Publication No.: US08134106B2Publication Date: 2012-03-13
- Inventor: Yoichi Tamegai , Satoru Nate , Isao Yamamoto
- Applicant: Yoichi Tamegai , Satoru Nate , Isao Yamamoto
- Applicant Address: JP
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2005-296719 20051011; JP2005-296721 20051011; JP2005-296963 20051011
- International Application: PCT/JP2006/318288 WO 20060914
- International Announcement: WO2007/043282 WO 20070419
- Main IPC: G01J1/32
- IPC: G01J1/32 ; H01J40/14 ; H03K17/78 ; H04B10/00 ; H04N3/14

Abstract:
A first transistor may be provided on a current path of a photo transistor. The bias current path may include a bias switch and a first bias resistor connected in series and is provided in parallel with a main current path including the phototransistor. A second transistor may configure a current mirror circuit with the first transistor, and generates second current formed by multiplying the first current flowing in the first transistor by a predetermined factor. The second current is charged in the charging capacitor and converted into a voltage. The bias current path turns on prior to the start of light reception of the phototransistor and turns off after a predetermined period has elapsed from the start of light reception of the phototransistor.
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