Invention Grant
- Patent Title: Thin-film transistor
- Patent Title (中): 薄膜晶体管
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Application No.: US11317746Application Date: 2005-12-23
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Publication No.: US08134144B2Publication Date: 2012-03-13
- Inventor: Yiliang Wu , Jessica Sacripante , Beng S. Ong , Paul Smith
- Applicant: Yiliang Wu , Jessica Sacripante , Beng S. Ong , Paul Smith
- Applicant Address: US CT Norwalk
- Assignee: Xerox Corporation
- Current Assignee: Xerox Corporation
- Current Assignee Address: US CT Norwalk
- Agency: Fay Sharpe LLP
- Main IPC: H01L51/30
- IPC: H01L51/30

Abstract:
There is provided herein a performance-enhancing composition comprising inorganic nanoparticles dispersed in a polymer selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. This composition, when applied to a thin-film transistor, such as a bottom-gate thin-film transistor, as an overcoat or top layer, improves the carrier mobility and current on/off ratio of the thin film transistor. Also provided is the thin-film transistor produced utilizing this process and/or composition.
Public/Granted literature
- US20070145357A1 Thin-film transistor Public/Granted day:2007-06-28
Information query
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