Invention Grant
US08134169B2 Patterned substrate for hetero-epitaxial growth of group-III nitride film
有权
III族氮化物膜的异质外延生长图案化衬底
- Patent Title: Patterned substrate for hetero-epitaxial growth of group-III nitride film
- Patent Title (中): III族氮化物膜的异质外延生长图案化衬底
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Application No.: US12166034Application Date: 2008-07-01
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Publication No.: US08134169B2Publication Date: 2012-03-13
- Inventor: Chen-Hua Yu , Ding-Yuan Chen
- Applicant: Chen-Hua Yu , Ding-Yuan Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.
Public/Granted literature
- US20100001375A1 Patterned Substrate for Hetero-epitaxial Growth of Group-III Nitride Film Public/Granted day:2010-01-07
Information query
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