Invention Grant
US08134169B2 Patterned substrate for hetero-epitaxial growth of group-III nitride film 有权
III族氮化物膜的异质外延生长图案化衬底

Patterned substrate for hetero-epitaxial growth of group-III nitride film
Abstract:
A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.
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