Invention Grant
US08134179B2 Photodiode with a reduced dark current and method for the production thereof
有权
具有降低的暗电流的光电二极管及其制造方法
- Patent Title: Photodiode with a reduced dark current and method for the production thereof
- Patent Title (中): 具有降低的暗电流的光电二极管及其制造方法
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Application No.: US11922255Application Date: 2006-04-28
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Publication No.: US08134179B2Publication Date: 2012-03-13
- Inventor: Jochen Kraft , Bernhard Löffler , Gerald Meinhardt
- Applicant: Jochen Kraft , Bernhard Löffler , Gerald Meinhardt
- Applicant Address: AT Unterpremstätten
- Assignee: austriamicrosystems AG
- Current Assignee: austriamicrosystems AG
- Current Assignee Address: AT Unterpremstätten
- Agent Cozen O'Connor
- Priority: DE102005027456 20050614
- International Application: PCT/EP2006/004027 WO 20060428
- International Announcement: WO2006/133765 WO 20061221
- Main IPC: H01L31/036
- IPC: H01L31/036
Abstract:
A photodiode in which a pn junction is formed between the doped region (DG) formed in the surface of a crystalline semiconductor substrate and a semiconductor layer (HS) deposited above said doped region. An additional doping (GD) is provided in the edge region of the doped zone, by means of which additional doping the pn junction is shifted deeper into the substrate (SU). With the greater distance of the pn junction from defects at phase boundaries that is achieved in this way, the dark current within the photodiode is reduced.
Public/Granted literature
- US20100038678A1 Photodiode with a Reduced Dark Current and Method for the Production Thereof Public/Granted day:2010-02-18
Information query
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