Invention Grant
- Patent Title: Semiconductor device having decreased contact resistance
- Patent Title (中): 具有降低的接触电阻的半导体器件
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Application No.: US11861928Application Date: 2007-09-26
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Publication No.: US08134208B2Publication Date: 2012-03-13
- Inventor: Zhonghai Shi , David Wu , Mark Michael
- Applicant: Zhonghai Shi , David Wu , Mark Michael , Donna Michael, legal representative
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
Semiconductor devices having improved contact resistance and methods for fabricating such semiconductor devices are provided. These semiconductor devices include a semiconductor device structure and a contact. The contact is electrically and physically coupled to the semiconductor device structure at both a surface portion and a sidewall portion of the semiconductor device structure.
Public/Granted literature
- US20090078998A1 SEMICONDUCTOR DEVICE HAVING DECREASED CONTACT RESISTANCE Public/Granted day:2009-03-26
Information query
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