Invention Grant
- Patent Title: Three-dimensional semiconductor device
- Patent Title (中): 三维半导体器件
-
Application No.: US11788974Application Date: 2007-04-23
-
Publication No.: US08134235B2Publication Date: 2012-03-13
- Inventor: Wen-Chih Chiou , David Ding-Chung Lu
- Applicant: Wen-Chih Chiou , David Ding-Chung Lu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A three-dimensional semiconductor device using redundant bonding-conductor structures to make inter-level electrical connections between multiple semiconductor chips. A first chip, or other semiconductor substrate, forms a first active area on its upper surface, and a second chip or other semiconductor substrate forms a second active area on its upper surface. According to the present invention, when the second chip has been mounted above the first chip, either face-up or face-down, the first active area is coupled to the second active area by at least one redundant bonding-conductor structure. In one embodiment, each redundant bonding-conductor structure includes at least one via portion that extends completely through the second chip to perform this function. In another, the redundant bonding-conductor structure extends downward to the top level interconnect. The present invention also includes a method for making such a device.
Public/Granted literature
- US20080258309A1 Three-dimensional semiconductor device Public/Granted day:2008-10-23
Information query
IPC分类: